PART |
Description |
Maker |
APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 67A 0.038 Ohm
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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APT20M38SVR APT20M38SVRG |
200V 67A 0.038W Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi Corporation ADPOW[Advanced Power Technology]
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APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
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2SJ404 2SJ405 2SK2163 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6A I(D) | TO-220AB Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 40A条(丁)|20VAR
|
EPCOS AG
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SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2 TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|25A I(T)RMS|TO-220 TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4 TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50 FUSE 1A FA SMT 1206 TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五(DRM)的| 300口(T)的有效值|00VAR50 TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五(DRM)的| 150A口(T)的有效值|00AB TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五(DRM)的| 300口(T)的有效值|培训基金,一辆M23 TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五(DRM)的|0A口(T)的有效值|培训基金- M12 TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五(DRM)的| 50A条口(T)的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc. EPCOS AG SIEMENS AG
|
APM4052DU4C-TRG |
7.5 A, 40 V, 0.038 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 GREEN PACKAGE-5
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Anpec Electronics, Corp. ANPEC ELECTRONICS CORP
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STD20NF10 STD20NF10T4 |
N-CHANNEL 100V - 0.038 OHM - 30A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET N-CHANNEL 100V - 0.038 OHM - 30A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET N-CHANNEL 100V - 0.038 ohm - 25A IPAK/DPAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET N-CHANNEL 100V - 0.038 ohm - 25A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET N-CHANNEL MOSFET
|
STMicroelectronics ST Microelectronics
|
FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m N-Channel MOSFET 200V, 18A, 0.14楼? N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
IRFS240B IRFS240BFP001 |
200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A 200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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